STGB10M65DF2
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- Mfr.Part #
- STGB10M65DF2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 650V 10A D2PAK
- Stock
- 950
- In Stock ：
- 950
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1.55V
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Switching Energy :
- 120μJ (on), 270μJ (off)
- Packaging :
- Cut Tape (CT)
- Collector Emitter Voltage (VCEO) :
- 2V
- Factory Lead Time :
- 30 Weeks
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 10A
- Mount :
- Surface Mount
- Current - Collector Pulsed (Icm) :
- 40A
- Max Collector Current :
- 20A
- IGBT Type :
- Trench Field Stop
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Base Part Number :
- STGB10
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Collector Emitter Breakdown Voltage :
- 650V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Power - Max :
- 115W
- Reverse Recovery Time :
- 96 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Td (on/off) @ 25°C :
- 19ns/91ns
- Test Condition :
- 400V, 10A, 22 Ω, 15V
- Input Type :
- Standard
- Max Power Dissipation :
- 115W
- Max Breakdown Voltage :
- 650V
- Gate Charge :
- 28nC
- Datasheets
- STGB10M65DF2
STGB10M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGB10M65DF2 Description
The STGB10M65DF2 is an IGBT developed using an advanced proprietary trench gate field-stop structure.
STGB10M65DF2 Features
-
6 μs of short-circuit withstand time
-
VCE(sat) = 1.55 V (typ.) @ IC = 10 A
-
Tight parameter distribution
-
Safer paralleling
-
Positive VCE(sat) temperature coefficient
-
Low thermal resistance
-
Soft and very fast recovery antiparallel diode
-
Maximum junction temperature: TJ = 175 °C
STGB10M65DF2 Applications
-
Motor control
-
UPS
-
PFC
-
General purpose inverter
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