STF8NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

40 Weeks

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Drain to Source Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

700m Ω @ 3.5A, 10V

Base Part Number :

STF8N

Drain-source On Resistance-Max :

0.7Ohm

Radiation Hardening :

No

Rise Time :

22ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Power Dissipation :

25W

Number of Elements :

1

Power Dissipation-Max :

25W Tc

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - annealed

Turn On Delay Time :

9 ns

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

7A

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Packaging :

Tube

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

28A

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Transistor Application :

SWITCHING

Number of Pins :

3

Fall Time (Typ) :

22 ns

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 50V

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

FET Type :

N-Channel

Series :

FDmesh™ II

Turn-Off Delay Time :

37 ns

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

200 mJ

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

7A