STF8NK100Z
- Mfr.Part #
- STF8NK100Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 6.5A TO220FP
- Stock
- 13,709
- In Stock :
- 13,709
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 102nC @ 10V
- Series :
- SuperMESH™
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Power Dissipation :
- 40W
- Factory Lead Time :
- 12 Weeks
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- ECCN Code :
- EAR99
- Threshold Voltage :
- 3.75V
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 28 ns
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 40W Tc
- Current Rating :
- 6.5A
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 2180pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Tc
- Drain to Source Voltage (Vdss) :
- 1000V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 1kV
- Rise Time :
- 19ns
- Continuous Drain Current (ID) :
- 6.5A
- Fall Time (Typ) :
- 30 ns
- Height :
- 16.4mm
- Lead Free :
- Lead Free
- Base Part Number :
- STF8N
- Turn-Off Delay Time :
- 59 ns
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 1.85 Ω @ 3.15A, 10V
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3 Full Pack
- Resistance :
- 1.85Ohm
- Voltage - Rated DC :
- 1kV
- Contact Plating :
- Tin
- Width :
- 4.6mm
- Length :
- 10.4mm
- Datasheets
- STF8NK100Z

N-Channel Tube 1.85 Ω @ 3.15A, 10V ±30V 2180pF @ 25V 102nC @ 10V 1000V TO-220-3 Full Pack
STF8NK100Z Description
The well-known strip-based Power MESHTM layout of ST is greatly optimized to produce the Super MESHTM series. In addition to drastically reducing on-resistance, extra effort is taken to guarantee excellent dv/dt capability for the most demanding applications. Such a series completes ST's line of high voltage MOSFETs, which includes the ground-breaking MD meshTM devices.
STF8NK100Z Features
-
EXTREMELY HIGH dv/dt CAPABILITY
-
100% AVALANCHE RATED
-
IMPROVED ESD CAPABILITY
-
VERY LOW INTRINSIC CAPACITANCE
STF8NK100Z Applications
-
HIGH CURRENT,SWITCHING APPLICATION
-
IDEAL FOR OFF-LINE POWER SUPPLIES
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