STF8NK85Z
- Mfr.Part #
- STF8NK85Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 850V 6.7A TO220FP
- Stock
- 10,740
- In Stock :
- 10,740
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 19ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Reach Compliance Code :
- not_compliant
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- SuperMESH™
- Packaging :
- Tube
- Additional Feature :
- AVALANCHE RATED
- JEDEC-95 Code :
- TO-220AB
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Element Configuration :
- Single
- Case Connection :
- Isolated
- Number of Elements :
- 1
- Fall Time (Typ) :
- 18 ns
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 35W Tc
- Turn-Off Delay Time :
- 58 ns
- Continuous Drain Current (ID) :
- 6.7A
- Power Dissipation :
- 35W
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1870pF @ 25V
- Transistor Application :
- SWITCHING
- Base Part Number :
- STF8N
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 3.35A, 10V
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3 Full Pack
- Current Rating :
- 6.7A
- Drain to Source Breakdown Voltage :
- 850V
- Voltage - Rated DC :
- 850V
- Current - Continuous Drain (Id) @ 25°C :
- 6.7A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- STF8NK85Z

N-Channel Tube 1.4 Ω @ 3.35A, 10V ±30V 1870pF @ 25V 60nC @ 10V TO-220-3 Full Pack
STF8NK85Z Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1870pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.7A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=850V. And this device has 850V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 58 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STF8NK85Z Features
a continuous drain current (ID) of 6.7A
a drain-to-source breakdown voltage of 850V voltage
the turn-off delay time is 58 ns
STF8NK85Z Applications
There are a lot of STMicroelectronics
STF8NK85Z applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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