STF8NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

FET Type :

N-Channel

Element Configuration :

Single

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

200 mJ

Turn-Off Delay Time :

37 ns

Fall Time (Typ) :

22 ns

Power Dissipation :

25W

Drain-source On Resistance-Max :

0.7Ohm

Pin Count :

3

Drain to Source Breakdown Voltage :

600V

Package / Case :

TO-220-3 Full Pack

Drain Current-Max (Abs) (ID) :

7A

Number of Elements :

1

Number of Pins :

3

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Case Connection :

Isolated

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STF8N

Operating Temperature :

150°C TJ

Vgs (Max) :

±30V

Power Dissipation-Max :

25W Tc

Rds On (Max) @ Id, Vgs :

700m Ω @ 3.5A, 10V

Rise Time :

22ns

Series :

FDmesh™ II

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 50V

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Factory Lead Time :

40 Weeks

Continuous Drain Current (ID) :

7A

Mount :

Through Hole

Turn On Delay Time :

9 ns

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Terminations :

3

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

28A