STF8N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

11 ns

Number of Elements :

1

REACH SVHC :

No SVHC

Min Operating Temperature :

-55°C

Rds On Max :

600 mΩ

Resistance :

600mOhm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

600mOhm @ 3.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Turn-Off Delay Time :

20 ns

Power Dissipation-Max :

25W Tc

Packaging :

Tube

Power Dissipation :

25W

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

650V

Lead Free :

Lead Free

Package / Case :

TO-220-3 Full Pack

Factory Lead Time :

17 Weeks

Turn On Delay Time :

50 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Resistance :

560mOhm

Rise Time :

14ns

Threshold Voltage :

4V

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Base Part Number :

STF8N

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Element Configuration :

Single

Supplier Device Package :

TO-220FP

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Series :

MDmesh™ V

Continuous Drain Current (ID) :

7A

Length :

10.4mm

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 100V

Operating Temperature :

150°C TJ

Width :

4.6mm

Vgs (Max) :

±25V

Mount :

Through Hole

Height :

16.4mm

Max Operating Temperature :

150°C

Input Capacitance :

690pF

Drain to Source Voltage (Vdss) :

650V

Gate to Source Voltage (Vgs) :

25V