STF8N65M5
- Mfr.Part #
- STF8N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 7A TO220FP
- Stock
- 19,333
- In Stock :
- 19,333
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±25V
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 600mOhm @ 3.5A, 10V
- Input Capacitance :
- 690pF
- Turn On Delay Time :
- 50 ns
- Series :
- MDmesh™ V
- Package / Case :
- TO-220-3 Full Pack
- Length :
- 10.4mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Packaging :
- Tube
- Power Dissipation-Max :
- 25W Tc
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- STF8N
- Rise Time :
- 14ns
- Contact Plating :
- Tin
- Supplier Device Package :
- TO-220FP
- Threshold Voltage :
- 4V
- Gate to Source Voltage (Vgs) :
- 25V
- Height :
- 16.4mm
- Width :
- 4.6mm
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 690pF @ 100V
- Turn-Off Delay Time :
- 20 ns
- Drain to Source Voltage (Vdss) :
- 650V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 11 ns
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Continuous Drain Current (ID) :
- 7A
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Through Hole
- Rds On Max :
- 600 mΩ
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Power Dissipation :
- 25W
- Drain to Source Breakdown Voltage :
- 650V
- Min Operating Temperature :
- -55°C
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 600mOhm
- Factory Lead Time :
- 17 Weeks
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 560mOhm
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Datasheets
- STF8N65M5

N-Channel Tube 600mOhm @ 3.5A, 10V ±25V 690pF @ 100V 15nC @ 10V 650V TO-220-3 Full Pack
STF8N65M5 Description
STF8N65M5 devices are N-channel MDmeshTM V Power MOSFETs based on STMicroelectronics' well-known PowerMESHTM horizontal layout structure and an innovative proprietary vertical manufacturing technology. The resulting product has an extraordinarily low onresistance, which is unrivaled among silicon-based Power MOSFETs, making it ideal for applications requiring high power density and efficiency.
STF8N65M5 Features
-
The best RDS(on) * region on the planet
-
a higher VDSS score
-
Exceptional dv/dt capabilities
-
Exceptional switching capabilities
-
It is simple to drive.
-
Avalanche-proofed to the nth degree
STF8N65M5 Applications
Switching applications
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