STF80N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3 Full Pack

Drain to Source Breakdown Voltage :

100V

FET Type :

N-Channel

Turn-Off Delay Time :

75 ns

Rds On (Max) @ Id, Vgs :

10m Ω @ 40A, 10V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Continuous Drain Current (ID) :

40A

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 50V

Fall Time (Typ) :

21 ns

Turn On Delay Time :

15 ns

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Factory Lead Time :

13 Weeks

JEDEC-95 Code :

TO-220AB

Series :

DeepGATE™, STripFET™ VII

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Additional Feature :

ULTRA LOW-ON RESISTANCE

Base Part Number :

STF80N

Length :

10.4mm

Number of Channels :

1

Number of Elements :

1

ECCN Code :

EAR99

Packaging :

Tube

Transistor Element Material :

SILICON

Case Connection :

Isolated

Element Configuration :

Single

Height :

16.4mm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Weight :

2.240009g

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Width :

4.6mm

Transistor Application :

SWITCHING

Power Dissipation-Max :

30W Tc

Rise Time :

13.5ns

Gate to Source Voltage (Vgs) :

25V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)