STF80N10F7
- Mfr.Part #
- STF80N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 40A TO220FP
- Stock
- 21,486
- In Stock :
- 21,486
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 40A
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 50V
- Additional Feature :
- ULTRA LOW-ON RESISTANCE
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 75 ns
- Package / Case :
- TO-220-3 Full Pack
- Width :
- 4.6mm
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Height :
- 16.4mm
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Length :
- 10.4mm
- Case Connection :
- Isolated
- FET Type :
- N-Channel
- Factory Lead Time :
- 13 Weeks
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 100V
- Mounting Type :
- Through Hole
- Series :
- DeepGATE™, STripFET™ VII
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Rise Time :
- 13.5ns
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Weight :
- 2.240009g
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 25V
- Base Part Number :
- STF80N
- Turn On Delay Time :
- 15 ns
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Fall Time (Typ) :
- 21 ns
- Rds On (Max) @ Id, Vgs :
- 10m Ω @ 40A, 10V
- Power Dissipation-Max :
- 30W Tc
- Datasheets
- STF80N10F7

N-Channel Tube 10m Ω @ 40A, 10V ±20V 3100pF @ 50V 45nC @ 10V TO-220-3 Full Pack
STF80N10F7 Description
These devices adopt the seventh generation design rules of ST's proprietary STripFET fabrication technology and adopt a new gate structure. The resulting power MOSFET shows the lowest RDS (on) of all packages.
STF80N10F7 Features
? Extremely low gate charge
? Ultra low on-resistance
? Low gate input resistance
STF80N10F7 Applications
? Switching applications
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