STF18NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

16 Weeks

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Number of Elements :

1

Mount :

Through Hole

Turn On Delay Time :

12 ns

Continuous Drain Current (ID) :

13A

Rds On (Max) @ Id, Vgs :

285m Ω @ 6.5A, 10V

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Temperature :

-55°C~150°C TJ

Rise Time :

22ns

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Case Connection :

Isolated

Pin Count :

3

Power Dissipation-Max :

30W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.4mm

Resistance :

285mOhm

Series :

MDmesh™ II

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 50V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

FET Type :

N-Channel

Radiation Hardening :

No

Threshold Voltage :

3V

Transistor Application :

SWITCHING

Base Part Number :

STF18

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

52A

Element Configuration :

Single

JESD-609 Code :

e3

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Terminations :

3

Height :

16.4mm

Fall Time (Typ) :

40 ns

Number of Pins :

3

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4.6mm

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

50 ns

Power Dissipation :

30W

Drain to Source Breakdown Voltage :

650V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

25V

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

4V @ 250µA