STF10N65K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

3V

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

40A

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

10A

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Width :

4.6mm

Series :

SuperMESH3™

Rise Time :

14ns

Base Part Number :

STF10N

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

Isolated

Power Dissipation-Max :

35W Tc

FET Type :

N-Channel

Radiation Hardening :

No

Length :

10.4mm

Terminal Finish :

Matte Tin (Sn) - annealed

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Turn-Off Delay Time :

44 ns

Fall Time (Typ) :

35 ns

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.85Ohm

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Packaging :

Tube

Turn On Delay Time :

14.5 ns

Terminal Position :

Single

ECCN Code :

EAR99

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.6A, 10V

Drain to Source Breakdown Voltage :

650V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Elements :

1

Height :

16.4mm

Factory Lead Time :

12 Weeks

Power Dissipation :

35W

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V