STF10N65K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Number of Pins :

3

Height :

16.4mm

Series :

SuperMESH3™

Pulsed Drain Current-Max (IDM) :

40A

Drain-source On Resistance-Max :

0.85Ohm

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 25V

Transistor Application :

SWITCHING

Length :

10.4mm

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

14.5 ns

Terminal Finish :

Matte Tin (Sn) - annealed

Drain to Source Breakdown Voltage :

650V

Packaging :

Tube

FET Type :

N-Channel

Pin Count :

3

Threshold Voltage :

3V

Mounting Type :

Through Hole

Mount :

Through Hole

Turn-Off Delay Time :

44 ns

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Width :

4.6mm

Number of Terminations :

3

Fall Time (Typ) :

35 ns

Package / Case :

TO-220-3 Full Pack

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STF10N

Case Connection :

Isolated

Power Dissipation-Max :

35W Tc

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Factory Lead Time :

12 Weeks

Rise Time :

14ns

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

10A

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Power Dissipation :

35W