STF10N65K3
- Mfr.Part #
- STF10N65K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 10A TO220FP
- Stock
- 18,541
- In Stock :
- 18,541
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 3V
- REACH SVHC :
- No SVHC
- Pulsed Drain Current-Max (IDM) :
- 40A
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 10A
- Vgs (Max) :
- ±30V
- Transistor Application :
- SWITCHING
- Width :
- 4.6mm
- Series :
- SuperMESH3™
- Rise Time :
- 14ns
- Base Part Number :
- STF10N
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1180pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- Isolated
- Power Dissipation-Max :
- 35W Tc
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Length :
- 10.4mm
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Turn-Off Delay Time :
- 44 ns
- Fall Time (Typ) :
- 35 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.85Ohm
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Packaging :
- Tube
- Turn On Delay Time :
- 14.5 ns
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 3.6A, 10V
- Drain to Source Breakdown Voltage :
- 650V
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Elements :
- 1
- Height :
- 16.4mm
- Factory Lead Time :
- 12 Weeks
- Power Dissipation :
- 35W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- Datasheets
- STF10N65K3

N-Channel Tube 1 Ω @ 3.6A, 10V ±30V 1180pF @ 25V 42nC @ 10V TO-220-3 Full Pack
STF10N65K3 Description
These SuperMESH3TM Power MOSFETs are the result of upgrades made to the SuperMESHTM technology from STMicroelectronics, together with a new, improved vertical structure. These devices are ideal for the most demanding applications thanks to their exceptionally low onresistance, superior dynamic performance, and great avalanche capability.
STF10N65K3 Features
-
100% avalanche tested
-
Extremely low on-resistance RDS(on)
-
Gate charge minimized
-
Very low intrinsic capacitances
-
Improved diode reverse recovery characteristics
-
Zener-protected
STF10N65K3 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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