STF10N65K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Series :

SuperMESH3™

Threshold Voltage :

3V

Turn-Off Delay Time :

44 ns

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.6A, 10V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Power Dissipation :

35W

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 25V

Transistor Element Material :

SILICON

Width :

4.6mm

Vgs (Max) :

±30V

Pin Count :

3

Terminal Position :

Single

Drain to Source Breakdown Voltage :

650V

Drain-source On Resistance-Max :

0.85Ohm

Rise Time :

14ns

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Case Connection :

Isolated

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

16.4mm

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Length :

10.4mm

Current - Continuous Drain (Id) @ 25°C :

10A Tc

JESD-609 Code :

e3

Turn On Delay Time :

14.5 ns

Power Dissipation-Max :

35W Tc

Number of Pins :

3

Number of Terminations :

3

Continuous Drain Current (ID) :

10A

Base Part Number :

STF10N

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

40A

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Package / Case :

TO-220-3 Full Pack

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

35 ns