STF10N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

35 ns

Drain to Source Breakdown Voltage :

800V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.5A, 10V

Vgs (Max) :

±30V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Fall Time (Typ) :

14 ns

Packaging :

Tube

Resistance :

470mOhm

Factory Lead Time :

17 Weeks

Base Part Number :

STF10N

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

9A

Vgs(th) (Max) @ Id :

5V @ 100µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

14.5 ns

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Element Configuration :

Single

Weight :

329.988449mg

Rise Time :

11ns

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

635pF @ 100V

FET Type :

N-Channel

Number of Channels :

1

Series :

MDmesh™

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

9A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

30W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99