STF10N80K5

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Mfr.Part #
STF10N80K5
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 800V 9A TO220FP
Stock
2,450
In Stock :
2,450

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Base Part Number :
STF10N
Weight :
329.988449mg
Turn On Delay Time :
14.5 ns
Element Configuration :
Single
Package / Case :
TO-220-3 Full Pack
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
35 ns
Mount :
Through Hole
Series :
MDmesh™
Rds On (Max) @ Id, Vgs :
600m Ω @ 4.5A, 10V
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
800V
Gate to Source Voltage (Vgs) :
30V
Number of Channels :
1
Power Dissipation-Max :
30W Tc
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
9A Tc
Input Capacitance (Ciss) (Max) @ Vds :
635pF @ 100V
Resistance :
470mOhm
Drain Current-Max (Abs) (ID) :
9A
Factory Lead Time :
17 Weeks
Operating Temperature :
-55°C~150°C TJ
Vgs(th) (Max) @ Id :
5V @ 100µA
FET Type :
N-Channel
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
9A
Fall Time (Typ) :
14 ns
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Rise Time :
11ns
Datasheets
STF10N80K5
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STF10N80K5 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STF10N, Package / Case:TO-220-3 Full Pack, Number of Channels:1, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, STF10N80K5 pinout, STF10N80K5 datasheet PDF, STF10N80K5 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STF10N80K5 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STF10N80K5


N-Channel Tube 600m Ω @ 4.5A, 10V ±30V 635pF @ 100V 22nC @ 10V TO-220-3 Full Pack

STF10N80K5 Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. 

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.



STF10N80K5 Features

Industry's lowest RDS(on) x area 

industry's best figure of merit (FOM) 

Ultra-low gate charge 

100% avalanche tested 

Zener-protected



STF10N80K5 Applications

Switching applications



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