STF10N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

9A

Drain to Source Breakdown Voltage :

800V

Power Dissipation-Max :

30W Tc

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Mounting Type :

Through Hole

Fall Time (Typ) :

14 ns

ECCN Code :

EAR99

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

635pF @ 100V

Gate to Source Voltage (Vgs) :

30V

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1

Factory Lead Time :

17 Weeks

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.5A, 10V

Turn On Delay Time :

14.5 ns

Drain Current-Max (Abs) (ID) :

9A

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

35 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs (Max) :

±30V

Resistance :

470mOhm

Series :

MDmesh™

Rise Time :

11ns

Weight :

329.988449mg

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Base Part Number :

STF10N

Vgs(th) (Max) @ Id :

5V @ 100µA