STF100N6F7
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- Mfr.Part #
- STF100N6F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 46A TO220FP
- Stock
- 1,425
- In Stock ：
- 1,425
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 46A
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 25W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Package / Case :
- TO-220-3 Full Pack
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Factory Lead Time :
- 22 Weeks
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STF100N
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 1980pF @ 25V
- Drain to Source Voltage (Vdss) :
- 60V
- Mount :
- Through Hole
- Series :
- STripFET™ F7
- Rds On (Max) @ Id, Vgs :
- 5.6m Ω @ 23A, 10V
- Datasheets
- STF100N6F7
N-Channel Tube 5.6m Ω @ 23A, 10V ±20V 1980pF @ 25V 30nC @ 10V 60V TO-220-3 Full Pack
STF100N6F7 Description
This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STF100N6F7 Features
-
Among the lowest RDS(on) on the market
-
Excellent figure of merit (FoM)
-
Low Crss/Ciss ratio for EMI immunity
-
High avalanche ruggedness
STF100N6F7 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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