STF10N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

3.75V

Pin Count :

3

Power Dissipation-Max :

30W Tc

Number of Elements :

1

Drain to Source Breakdown Voltage :

620V

Width :

4.6mm

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

8.4A

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

41 ns

Case Connection :

Isolated

Turn On Delay Time :

14.5 ns

Avalanche Energy Rating (Eas) :

220 mJ

Number of Pins :

3

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

30W

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 50V

Fall Time (Typ) :

31 ns

ECCN Code :

EAR99

FET Type :

N-Channel

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Terminal Position :

Single

Rise Time :

15ns

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Base Part Number :

STF10N

Drain-source On Resistance-Max :

0.75Ohm

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

750m Ω @ 4A, 10V

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Terminal Finish :

Matte Tin (Sn) - annealed

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

8.4A Tc

Height :

16.4mm

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Length :

10.4mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Series :

SuperMESH3™