STF10N62K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

220 mJ

Number of Pins :

3

Vgs (Max) :

±30V

Mount :

Through Hole

Terminal Position :

Single

Number of Terminations :

3

Height :

16.4mm

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Threshold Voltage :

3.75V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 50V

Width :

4.6mm

Current - Continuous Drain (Id) @ 25°C :

8.4A Tc

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

620V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Package / Case :

TO-220-3 Full Pack

Case Connection :

Isolated

FET Type :

N-Channel

Transistor Application :

SWITCHING

Lead Free :

Lead Free

JESD-609 Code :

e3

Base Part Number :

STF10N

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Length :

10.4mm

Series :

SuperMESH3™

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.75Ohm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

31 ns

Power Dissipation :

30W

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Terminal Finish :

Matte Tin (Sn) - annealed

ECCN Code :

EAR99

Packaging :

Tube

Turn-Off Delay Time :

41 ns

Power Dissipation-Max :

30W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

14.5 ns

Rise Time :

15ns

Rds On (Max) @ Id, Vgs :

750m Ω @ 4A, 10V

Continuous Drain Current (ID) :

8.4A