STF10N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.4mm

Number of Channels :

1

Drain to Source Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 100V

Gate to Source Voltage (Vgs) :

25V

Mount :

Through Hole

Rise Time :

8ns

Series :

MDmesh™ II Plus

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

ECCN Code :

EAR99

FET Type :

N-Channel

Height :

16.4mm

Turn-Off Delay Time :

32.5 ns

Rds On (Max) @ Id, Vgs :

600m Ω @ 4A, 10V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Turn On Delay Time :

8.8 ns

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Factory Lead Time :

16 Weeks

Vgs (Max) :

±25V

Mounting Type :

Through Hole

Power Dissipation :

25W

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Power Dissipation-Max :

25W Tc

RoHS Status :

ROHS3 Compliant

Base Part Number :

STF10N

Width :

4.6mm

Number of Pins :

3

Fall Time (Typ) :

13.2 ns

Element Configuration :

Single

Packaging :

Tube

Continuous Drain Current (ID) :

7.5A