STF10N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

25W

Length :

10.4mm

Continuous Drain Current (ID) :

7.5A

Height :

16.4mm

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Turn On Delay Time :

8.8 ns

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 100V

Package / Case :

TO-220-3 Full Pack

Number of Channels :

1

Power Dissipation-Max :

25W Tc

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

25V

Mount :

Through Hole

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Rise Time :

8ns

Turn-Off Delay Time :

32.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Element Configuration :

Single

Width :

4.6mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

13.2 ns

Series :

MDmesh™ II Plus

Drain to Source Breakdown Voltage :

600V

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

600m Ω @ 4A, 10V

Number of Pins :

3

Base Part Number :

STF10N

Radiation Hardening :

No

Packaging :

Tube

RoHS Status :

ROHS3 Compliant