STF10N60M2

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Mfr.Part #
STF10N60M2
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 600V 7.5A TO220FP
Stock
48
In Stock :
48

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±25V
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
13.2 ns
Power Dissipation :
25W
ECCN Code :
EAR99
Base Part Number :
STF10N
Mounting Type :
Through Hole
Height :
16.4mm
Number of Pins :
3
Factory Lead Time :
16 Weeks
Element Configuration :
Single
Series :
MDmesh™ II Plus
Drain to Source Breakdown Voltage :
600V
Mount :
Through Hole
Vgs(th) (Max) @ Id :
4V @ 250µA
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Input Capacitance (Ciss) (Max) @ Vds :
400pF @ 100V
Rise Time :
8ns
Power Dissipation-Max :
25W Tc
Package / Case :
TO-220-3 Full Pack
Length :
10.4mm
Operating Temperature :
-55°C~150°C TJ
Width :
4.6mm
Rds On (Max) @ Id, Vgs :
600m Ω @ 4A, 10V
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
13.5nC @ 10V
Turn-Off Delay Time :
32.5 ns
FET Type :
N-Channel
Packaging :
Tube
Gate to Source Voltage (Vgs) :
25V
Turn On Delay Time :
8.8 ns
Number of Channels :
1
Current - Continuous Drain (Id) @ 25°C :
7.5A Tc
Continuous Drain Current (ID) :
7.5A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
STF10N60M2
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STF10N60M2 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STF10N, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3 Full Pack, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, STF10N60M2 pinout, STF10N60M2 datasheet PDF, STF10N60M2 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STF10N60M2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STF10N60M2


N-Channel Tube 600m Ω @ 4A, 10V ±25V 400pF @ 100V 13.5nC @ 10V TO-220-3 Full Pack

STF10N60M2 Description


MDmeshTM M2 technology was used to develop STF10N60M2, an N-channel Power MOSFET. The device has low on-resistance and optimal switching characteristics thanks to its strip layout and improved vertical structure, making it suited for the most demanding high-efficiency converters.


STF10N60M2 Features


  • Zener-protected

  • 100% avalanche tested

  • Extremely low gate charge

  • Excellent output capacitance (COSS) profile



STF10N60M2 Applications


  • Switching applications


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