STF18N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

791pF @ 100V

Width :

4.6mm

Rise Time :

9ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

25V

Gate Charge (Qg) (Max) @ Vgs :

21.5nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

13A

Element Configuration :

Single

Height :

16.4mm

Number of Channels :

1

Drain to Source Breakdown Voltage :

600V

FET Type :

N-Channel

Mount :

Through Hole

Base Part Number :

STF18

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Vgs (Max) :

±25V

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Series :

MDmesh™ II Plus

Rds On (Max) @ Id, Vgs :

280m Ω @ 6.5A, 10V

Number of Pins :

3

Fall Time (Typ) :

10.6 ns

Turn On Delay Time :

12 ns

Power Dissipation :

25W

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3 Full Pack

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Power Dissipation-Max :

25W Tc

Length :

10.4mm

Turn-Off Delay Time :

47 ns

Factory Lead Time :

16 Weeks