STF16NF25
- Mfr.Part #
- STF16NF25
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 14A TO220FP
- Stock
- 3,455
- In Stock :
- 3,455
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Length :
- 10.4mm
- Case Connection :
- Isolated
- Fall Time (Typ) :
- 17 ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 25W
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 9 ns
- Series :
- STripFET™ II
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 250V
- Rds On (Max) @ Id, Vgs :
- 235m Ω @ 6.5A, 10V
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 680pF @ 25V
- Width :
- 4.6mm
- Nominal Vgs :
- 3 V
- Number of Elements :
- 1
- Rise Time :
- 17ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 16.4mm
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 25W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 52A
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Base Part Number :
- STF16
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 6.5A
- Turn-Off Delay Time :
- 35 ns
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tube
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- STF16NF25

N-Channel Tube 235m Ω @ 6.5A, 10V ±20V 680pF @ 25V 18nC @ 10V TO-220-3 Full Pack
STF16NF25 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 680pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 6.5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.Peak drain current is 52A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STF16NF25 Features
a continuous drain current (ID) of 6.5A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 52A.
STF16NF25 Applications
There are a lot of STMicroelectronics
STF16NF25 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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