STF16N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

25W

Mounting Type :

Through Hole

Threshold Voltage :

4V

Transistor Application :

SWITCHING

Vgs (Max) :

±25V

Avalanche Energy Rating (Eas) :

200 mJ

Length :

10.4mm

Terminal Finish :

Matte Tin (Sn) - annealed

Gate to Source Voltage (Vgs) :

25V

Rise Time :

9ns

Mount :

Through Hole

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Fall Time (Typ) :

7 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STF16

Vgs(th) (Max) @ Id :

5V @ 250μA

Height :

9.3mm

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 100V

Case Connection :

Isolated

Number of Terminations :

3

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Number of Elements :

1

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Resistance :

279mOhm

Continuous Drain Current (ID) :

12A

Package / Case :

TO-220-3 Full Pack

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

30 ns

FET Type :

N-Channel

Turn On Delay Time :

25 ns

Drain to Source Breakdown Voltage :

650V

Lead Free :

Lead Free

Width :

4.6mm

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

299m Ω @ 6A, 10V

Factory Lead Time :

17 Weeks

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

48A

Element Configuration :

Single

Power Dissipation-Max :

25W Tc

Series :

MDmesh™ V

Additional Feature :

ULTRA-LOW RESISTANCE

Pin Count :

3