STF16N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

16 Weeks

Number of Elements :

1

Continuous Drain Current (ID) :

11A

Pulsed Drain Current-Max (IDM) :

44A

Case Connection :

Isolated

Package / Case :

TO-220-3 Full Pack

Drain to Source Voltage (Vdss) :

650V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

718pF @ 100V

Rds On (Max) @ Id, Vgs :

360m Ω @ 5.5A, 10V

Lead Free :

Lead Free

Series :

MDmesh™ M2

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

Avalanche Energy Rating (Eas) :

360 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.36ohm

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Power Dissipation-Max :

25W Tc

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Base Part Number :

STF16

Gate Charge (Qg) (Max) @ Vgs :

19.5nC @ 10V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Terminal Position :

Single

DS Breakdown Voltage-Min :

650V

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel