STF16N50U
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- Mfr.Part #
- STF16N50U
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 15A TO220FP
- Stock
- 10,627
- In Stock ：
- 10,627
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 21 ns
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 60A
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1950pF @ 25V
- FET Type :
- N-Channel
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 520m Ω @ 5A, 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Radiation Hardening :
- No
- Drain-source On Resistance-Max :
- 0.52Ohm
- Rise Time :
- 21ns
- Continuous Drain Current (ID) :
- 15A
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-220AB
- Series :
- UltraFASTmesh™
- Vgs (Max) :
- ±30V
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Power Dissipation-Max :
- 30W Tc
- Case Connection :
- Isolated
- Fall Time (Typ) :
- 15 ns
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Turn On Delay Time :
- 16 ns
- DS Breakdown Voltage-Min :
- 500V
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Base Part Number :
- STF16
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 250 mJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3 Full Pack
- Number of Terminations :
- 3
- Datasheets
- STF16N50U
N-Channel Tube 520m Ω @ 5A, 10V ±30V 1950pF @ 25V 40nC @ 10V 500V TO-220-3 Full Pack
STF16N50U Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 250 mJ.A device's maximum input capacitance is 1950pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 15A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
STF16N50U Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 15A
the turn-off delay time is 21 ns
based on its rated peak drain current 60A.
a 500V drain to source voltage (Vdss)
STF16N50U Applications
There are a lot of STMicroelectronics
STF16N50U applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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