STF15N65M5
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- Mfr.Part #
- STF15N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 11A TO220FP
- Stock
- 6,779
- In Stock ：
- 6,779
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 4.6mm
- Turn On Delay Time :
- 30 ns
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Turn-Off Delay Time :
- 30 ns
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 340m Ω @ 5.5A, 10V
- Base Part Number :
- STF15
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Height :
- 16.4mm
- Package / Case :
- TO-220-3 Full Pack
- Pulsed Drain Current-Max (IDM) :
- 44A
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Series :
- MDmesh™ V
- Operating Temperature :
- 150°C TJ
- Power Dissipation-Max :
- 30W Tc
- Packaging :
- Tube
- Vgs (Max) :
- ±25V
- ECCN Code :
- EAR99
- Resistance :
- 340mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 650V
- Input Capacitance (Ciss) (Max) @ Vds :
- 816pF @ 100V
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 11A
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Length :
- 10.4mm
- Lead Free :
- Lead Free
- Power Dissipation :
- 25W
- Factory Lead Time :
- 17 Weeks
- Datasheets
- STF15N65M5
N-Channel Tube 340m Ω @ 5.5A, 10V ±25V 816pF @ 100V 22nC @ 10V TO-220-3 Full Pack
STF15N65M5 Overview
A device's maximum input capacitance is 816pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.Its maximum pulsed drain current is 44A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 30 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STF15N65M5 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 30 ns
based on its rated peak drain current 44A.
STF15N65M5 Applications
There are a lot of STMicroelectronics
STF15N65M5 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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