STF13N95K3
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- Mfr.Part #
- STF13N95K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 950V 10A TO220FP
- Stock
- 4,081
- In Stock ：
- 4,081
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Additional Feature :
- ULTRA-LOW RESISTANCE
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Turn On Delay Time :
- 18 ns
- Continuous Drain Current (ID) :
- 10A
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 40A
- Resistance :
- 850mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- ECCN Code :
- EAR99
- Case Connection :
- Isolated
- Package / Case :
- TO-220-3 Full Pack
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 16ns
- Element Configuration :
- Single
- Base Part Number :
- STF13
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 1620pF @ 100V
- Factory Lead Time :
- 12 Weeks
- Drain to Source Breakdown Voltage :
- 950V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 51nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 21 ns
- Power Dissipation :
- 40W
- Series :
- SuperMESH3™
- Turn-Off Delay Time :
- 50 ns
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 400 mJ
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 850m Ω @ 5A, 10V
- Power Dissipation-Max :
- 40W Tc
- Radiation Hardening :
- No
- Datasheets
- STF13N95K3
N-Channel Tube 850m Ω @ 5A, 10V ±30V 1620pF @ 100V 51nC @ 10V TO-220-3 Full Pack
STF13N95K3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 400 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1620pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10A.With a drain-source breakdown voltage of 950V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 950V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.Peak drain current for this device is 40A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STF13N95K3 Features
the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 950V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 40A.
STF13N95K3 Applications
There are a lot of STMicroelectronics
STF13N95K3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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