STF12NM60N

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Mfr.Part #
STF12NM60N
Manufacturer
STMicroelectronics
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 600V 10A TO220FP
Stock
8,719
In Stock :
8,719

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Pin Count :
3
Fall Time (Typ) :
10 ns
JEDEC-95 Code :
TO-220AB
Terminal Finish :
Matte Tin (Sn)
Resistance :
410mOhm
Mounting Type :
Through Hole
Threshold Voltage :
3V
Gate Charge (Qg) (Max) @ Vgs :
30.5nC @ 10V
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Continuous Drain Current (ID) :
10A
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
not_compliant
Power Dissipation-Max :
25W Tc
Turn-Off Delay Time :
60 ns
Case Connection :
Isolated
ECCN Code :
EAR99
FET Type :
N-Channel
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
40A
Vgs(th) (Max) @ Id :
4V @ 250µA
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Transistor Element Material :
SILICON
Base Part Number :
STF12
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
25W
Avalanche Energy Rating (Eas) :
200 mJ
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
960pF @ 50V
Package / Case :
TO-220-3 Full Pack
REACH SVHC :
No SVHC
Dual Supply Voltage :
600V
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Mount :
Through Hole
Vgs (Max) :
±25V
Packaging :
Tube
Termination :
Through Hole
Nominal Vgs :
3 V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rise Time :
9ns
Rds On (Max) @ Id, Vgs :
410m Ω @ 5A, 10V
Drain to Source Breakdown Voltage :
600V
Series :
MDmesh™ II
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
STF12NM60N
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STF12NM60N from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:STF12, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3 Full Pack, Number of Pins:3, STF12NM60N pinout, STF12NM60N datasheet PDF, STF12NM60N amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STF12NM60N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STF12NM60N


N-Channel Tube 410m Ω @ 5A, 10V ±25V 960pF @ 50V 30.5nC @ 10V TO-220-3 Full Pack

STF12NM60N Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.A device's maximum input capacitance is 960pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 60 ns.Its maximum pulsed drain current is 40A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3V.This device uses no drive voltage (10V) to reduce its overall power consumption.

STF12NM60N Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 40A.
a threshold voltage of 3V


STF12NM60N Applications


There are a lot of STMicroelectronics
STF12NM60N applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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