STF12N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

17 Weeks

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Power Dissipation :

25W

Threshold Voltage :

4V

Element Configuration :

Single

Case Connection :

Isolated

FET Type :

N-Channel

Pin Count :

3

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

650V

Series :

MDmesh™ V

JESD-609 Code :

e3

Height :

16.4mm

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

430m Ω @ 4.3A, 10V

Packaging :

Tube

Package / Case :

TO-220-5 Full Pack

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 100V

Fall Time (Typ) :

24 ns

Turn On Delay Time :

22.6 ns

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

8.5A

Power Dissipation-Max :

25W Tc

Vgs (Max) :

±25V

Terminal Finish :

Matte Tin (Sn) - annealed

Turn-Off Delay Time :

15.6 ns

Rise Time :

9.5ns

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

8.5A Tc

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

25V

Base Part Number :

STF12

Width :

4.6mm

Resistance :

430mOhm

Radiation Hardening :

No

Length :

10.4mm