STF120NF10
- Mfr.Part #
- STF120NF10
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 41A TO220FP
- Stock
- 711
- In Stock :
- 711
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5200pF @ 25V
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Pin Count :
- 3
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Power Dissipation-Max :
- 45W Tc
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 233nC @ 10V
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 25 ns
- Mounting Type :
- Through Hole
- Series :
- STripFET™ II
- Base Part Number :
- STF12
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-220-3 Full Pack
- Voltage :
- 100V
- Resistance :
- 10.5mOhm
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 60A, 10V
- Avalanche Energy Rating (Eas) :
- 550 mJ
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 132 ns
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 68 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current :
- 41A
- Rise Time :
- 90ns
- Continuous Drain Current (ID) :
- 41A
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tube
- Power Dissipation :
- 45W
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Datasheets
- STF120NF10

N-Channel Tube 10.5m Ω @ 60A, 10V ±20V 5200pF @ 25V 233nC @ 10V TO-220-3 Full Pack
STF120NF10 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 550 mJ.A device's maximum input capacitance is 5200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 41A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 132 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STF120NF10 Features
the avalanche energy rating (Eas) is 550 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 132 ns
STF120NF10 Applications
There are a lot of STMicroelectronics
STF120NF10 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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