STF11NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Fall Time (Typ) :

9 ns

Power Dissipation-Max :

25W Tc

Avalanche Energy Rating (Eas) :

200 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Base Part Number :

STF11

Current - Continuous Drain (Id) @ 25°C :

10A Tc

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Rds On (Max) @ Id, Vgs :

450m Ω @ 5A, 10V

FET Type :

N-Channel

Threshold Voltage :

4V

ECCN Code :

EAR99

Width :

4.6mm

Turn-Off Delay Time :

50 ns

Operating Mode :

ENHANCEMENT MODE

Rise Time :

7ns

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drain-source On Resistance-Max :

0.45Ohm

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

40A

Series :

FDmesh™ II

Turn On Delay Time :

16 ns

Package / Case :

TO-220-3 Full Pack

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

Number of Elements :

1

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±25V

Power Dissipation :

90W

Element Configuration :

Single

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Packaging :

Tube

Length :

10.4mm

Height :

16.4mm

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

10A

Drain to Source Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Number of Pins :

3