STF11N65M5
- Mfr.Part #
- STF11N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 9A TO220FP
- Stock
- 24,014
- In Stock :
- 24,014
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 480m Ω @ 4.5A, 10V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3 Full Pack
- Drain Current-Max (Abs) (ID) :
- 9A
- Length :
- 10.4mm
- Base Part Number :
- STF11
- Width :
- 4.6mm
- Turn-Off Delay Time :
- 23 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Vgs (Max) :
- ±25V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.48Ohm
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 23 ns
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 17 Weeks
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Power Dissipation-Max :
- 25W Tc
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Height :
- 16.4mm
- Series :
- MDmesh™ V
- Continuous Drain Current (ID) :
- 9A
- Power Dissipation :
- 85W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 644pF @ 100V
- Drain to Source Breakdown Voltage :
- 650V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Datasheets
- STF11N65M5

N-Channel Tube 480m Ω @ 4.5A, 10V ±25V 644pF @ 100V 17nC @ 10V TO-220-3 Full Pack
STF11N65M5 Descirption
The STF11N65M5 power MOSFET from STMicroelectronics is what you need if your design calls for either signal amplification or signal switching. It can dissipate up to 25000 mW of power. This gadget makes use of mdmesh technology. The enhancement mode is used by this N channel MOSFET transistor. The operating temperature range for this MOSFET transistor is -55 °C to 150 °C.
STF11N65M5 Features
-
Extremely low RDS(on)
-
100% avalanche tested
-
Excellent switching performance
-
Low gate charge and input capacitance
STF11N65M5 Applications
-
Automotive
-
Enterprise systems
-
Communications equipment
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