STF11N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

25W Tc

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Continuous Drain Current (ID) :

7A

Drain to Source Breakdown Voltage :

650V

Resistance :

600mOhm

Number of Pins :

3

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 100V

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

25V

Rise Time :

7.5ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

REACH SVHC :

No SVHC

Weight :

329.988449mg

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

12.5nC @ 10V

ECCN Code :

EAR99

Base Part Number :

STF11

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

670m Ω @ 3.5A, 10V

Vgs (Max) :

±25V

Series :

MDmesh™ II Plus

Turn On Delay Time :

9.5 ns

Turn-Off Delay Time :

26 ns

Fall Time (Typ) :

15 ns

Threshold Voltage :

3V