STF10NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Number of Pins :

3

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

480m Ω @ 4.5A, 10V

Gate to Source Voltage (Vgs) :

25V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Power Dissipation-Max :

25W Tc

Power Dissipation :

25W

Fall Time (Typ) :

20 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

Drain to Source Breakdown Voltage :

650V

REACH SVHC :

No SVHC

Mount :

Through Hole

Number of Terminations :

3

Termination :

Through Hole

Drain Current-Max (Abs) (ID) :

9A

Pin Count :

3

Width :

4.6mm

Rise Time :

8ns

Continuous Drain Current (ID) :

4.5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

Packaging :

Tube

Number of Elements :

1

Mounting Type :

Through Hole

Series :

MDmesh™ II

Height :

16.4mm

Vgs (Max) :

±25V

Terminal Finish :

Matte Tin (Sn) - annealed

Package / Case :

TO-220-3 Full Pack

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Nominal Vgs :

3 V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Turn On Delay Time :

12 ns

Base Part Number :

STF10N

Dual Supply Voltage :

650V

Turn-Off Delay Time :

50 ns

Drain-source On Resistance-Max :

0.48Ohm

Length :

10.4mm

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3