STF10NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

16.4mm

Resistance :

550mOhm

Case Connection :

Isolated

Number of Terminations :

3

Fall Time (Typ) :

9.8 ns

Operating Temperature :

-55°C~150°C TJ

Length :

10.4mm

Transistor Element Material :

SILICON

Power Dissipation-Max :

25W Tc

Rds On (Max) @ Id, Vgs :

550m Ω @ 4A, 10V

Gate to Source Voltage (Vgs) :

25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Number of Elements :

1

Threshold Voltage :

4V

Terminal Finish :

Matte Tin (Sn) - annealed

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 50V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Drain Current-Max (Abs) (ID) :

8A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

25W

Base Part Number :

STF10N

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

600V

Turn On Delay Time :

9.2 ns

Transistor Application :

SWITCHING

Width :

4.6mm

Element Configuration :

Single

Pin Count :

3

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

650V

Package / Case :

TO-220-3 Full Pack

JESD-609 Code :

e3

Factory Lead Time :

16 Weeks

Radiation Hardening :

No

Rise Time :

10ns

Series :

FDmesh™ II

Packaging :

Tube

Turn-Off Delay Time :

32 ns

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

8A