STD8NM60ND

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Mfr.Part #
STD8NM60ND
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 7A DPAK
Stock
7,938
In Stock :
7,938

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
2
Pulsed Drain Current-Max (IDM) :
28A
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSSO-G2
Gate to Source Voltage (Vgs) :
30V
Terminal Finish :
Matte Tin (Sn) - annealed
Base Part Number :
STD8N
Turn On Delay Time :
9 ns
Transistor Application :
SWITCHING
Nominal Vgs :
4 V
Drain Current-Max (Abs) (ID) :
7A
Pbfree Code :
yes
Series :
FDmesh™ II
Threshold Voltage :
4V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rise Time :
22ns
Terminal Form :
Gull wing
Vgs (Max) :
±30V
Avalanche Energy Rating (Eas) :
200 mJ
Mount :
Surface Mount
REACH SVHC :
No SVHC
JESD-609 Code :
e3
Operating Temperature :
150°C TJ
Lead Free :
Lead Free
Pin Count :
3
Mounting Type :
Surface Mount
Turn-Off Delay Time :
37 ns
Drain to Source Breakdown Voltage :
600V
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation :
70W
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Resistance :
700mOhm
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Rds On (Max) @ Id, Vgs :
700m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250μA
Fall Time (Typ) :
22 ns
Number of Elements :
1
Element Configuration :
Single
Number of Pins :
3
Case Connection :
DRAIN
Continuous Drain Current (ID) :
7A
Power Dissipation-Max :
70W Tc
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Input Capacitance (Ciss) (Max) @ Vds :
560pF @ 50V
Radiation Hardening :
No
Datasheets
STD8NM60ND
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD8NM60ND from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Base Part Number:STD8N, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, STD8NM60ND pinout, STD8NM60ND datasheet PDF, STD8NM60ND amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD8NM60ND ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD8NM60ND


N-Channel Tape & Reel (TR) 700m Ω @ 3.5A, 10V ±30V 560pF @ 50V 22nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD8NM60ND Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 560pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 7A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 37 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 28A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

STD8NM60ND Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 37 ns
based on its rated peak drain current 28A.
a threshold voltage of 4V


STD8NM60ND Applications


There are a lot of STMicroelectronics
STD8NM60ND applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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