STD8NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

650m Ω @ 3.5A, 10V

Pulsed Drain Current-Max (IDM) :

28A

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

600V

Rise Time :

12ns

Continuous Drain Current (ID) :

7A

Drain Current-Max (Abs) (ID) :

7A

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

7A Tc

JESD-609 Code :

e3

Number of Terminations :

2

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

25V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.65Ohm

Qualification Status :

Not Qualified

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 50V

Base Part Number :

STD8N

Terminal Finish :

Matte Tin (Sn)

Series :

MDmesh™ II

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

70W

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

40 ns

Mount :

Surface Mount

Pbfree Code :

yes

Vgs (Max) :

±25V

Power Dissipation-Max :

70W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Number of Elements :

1

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

200 mJ

Fall Time (Typ) :

10 ns

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE