STD8NM60N-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Power Dissipation :

70W

Drain to Source Breakdown Voltage :

600V

Pin Count :

3

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

3.5A

FET Type :

N-Channel

Number of Pins :

3

REACH SVHC :

No SVHC

Packaging :

Tube

Nominal Vgs :

3 V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 50V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Turn-Off Delay Time :

40 ns

Series :

MDmesh™ II

Avalanche Energy Rating (Eas) :

200 mJ

Rise Time :

12ns

ECCN Code :

EAR99

Power Dissipation-Max :

70W Tc

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

28A

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Termination :

Through Hole

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

650m Ω @ 3.5A, 10V

Reach Compliance Code :

not_compliant

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±25V

Gate to Source Voltage (Vgs) :

25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.65Ohm

Base Part Number :

STD8N

Dual Supply Voltage :

600V

Drain Current-Max (Abs) (ID) :

7A