STD8NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.6mm

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Gate to Source Voltage (Vgs) :

25V

Turn On Delay Time :

7 ns

JESD-609 Code :

e3

Resistance :

790mOhm

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

790m Ω @ 2.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

5A

Fall Time (Typ) :

8.8 ns

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

16 Weeks

Number of Elements :

1

Drain to Source Breakdown Voltage :

500V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

45W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

4.4ns

Lead Free :

Lead Free

Width :

6.2mm

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pin Count :

3

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

5A

Operating Temperature :

150°C TJ

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Height :

2.4mm

Pulsed Drain Current-Max (IDM) :

20A

Terminal Form :

Gull wing

Base Part Number :

STD8N

Series :

MDmesh™ II

Vgs (Max) :

±25V

Turn-Off Delay Time :

25 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Power Dissipation :

45W

Input Capacitance (Ciss) (Max) @ Vds :

364pF @ 50V

Terminal Finish :

Matte Tin (Sn) - annealed

Transistor Element Material :

SILICON

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Threshold Voltage :

3V

Packaging :

Tape and Reel (TR)