STD8N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

ECCN Code :

EAR99

Series :

MDmesh™ V

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 100V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Power Dissipation :

70W

Rise Time :

14ns

Power Dissipation-Max :

70W Tc

Drain Current-Max (Abs) (ID) :

7A

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Pin Count :

3

Length :

6.6mm

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STD8N

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Radiation Hardening :

No

Resistance :

600mOhm

FET Type :

N-Channel

Turn-Off Delay Time :

20 ns

Peak Reflow Temperature (Cel) :

260

Additional Feature :

ULTRA-LOW RESISTANCE

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Threshold Voltage :

4V

Width :

6.2mm

Drain to Source Breakdown Voltage :

650V

Factory Lead Time :

17 Weeks

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Vgs (Max) :

±25V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Terminal Finish :

Matte Tin (Sn) - annealed

Gate to Source Voltage (Vgs) :

25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Fall Time (Typ) :

11 ns

Turn On Delay Time :

50 ns

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

Operating Temperature :

150°C TJ

Height :

2.4mm

Continuous Drain Current (ID) :

7A

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

28A

Mount :

Surface Mount