STD1NK80ZT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Base Part Number :

STD1NK

Avalanche Energy Rating (Eas) :

50 mJ

Vgs (Max) :

±30V

Length :

6.6mm

Current Rating :

1A

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

12 Weeks

Width :

6.2mm

Resistance :

16Ohm

JESD-609 Code :

e3

Element Configuration :

Single

JEDEC-95 Code :

TO-252AA

Radiation Hardening :

No

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

800V

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

45W

Transistor Application :

SWITCHING

Voltage - Rated DC :

800V

Continuous Drain Current (ID) :

1A

Threshold Voltage :

3.75V

Rise Time :

30ns

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Elements :

1

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

FET Type :

N-Channel

Height :

2.4mm

Turn-Off Delay Time :

22 ns

Mounting Type :

Surface Mount

Series :

SuperMESH™

Drain Current-Max (Abs) (ID) :

1A

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

16 Ω @ 500mA, 10V

REACH SVHC :

No SVHC

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Channels :

1

Turn On Delay Time :

8 ns

RoHS Status :

ROHS3 Compliant

Manufacturer Package Identifier :

TO-252-P032P

Number of Terminations :

2

Fall Time (Typ) :

55 ns

Pulsed Drain Current-Max (IDM) :

5A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Power Dissipation-Max :

45W Tc

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 10V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)