STD100N03LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

70A

Fall Time (Typ) :

35 ns

Series :

STripFET™

Drain-source On Resistance-Max :

0.0055Ohm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1V @ 250μA

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

9 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 40A, 10V

JEDEC-95 Code :

TO-251AA

Voltage - Rated DC :

30V

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Current Rating :

80A

Rise Time :

205ns

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

30V

Pin Count :

3

Continuous Drain Current (ID) :

80A

Terminal Form :

Gull wing

Power Dissipation :

110W

ECCN Code :

EAR99

Pbfree Code :

yes

Base Part Number :

STD10

Current - Continuous Drain (Id) @ 25°C :

80A Tc

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Power Dissipation-Max :

110W Tc

Transistor Application :

SWITCHING

Number of Elements :

1

Vgs (Max) :

±20V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2060pF @ 25V

Avalanche Energy Rating (Eas) :

500 mJ

Number of Pins :

3

Turn-Off Delay Time :

31 ns

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)