STD100N03LT4
- Mfr.Part #
- STD100N03LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A DPAK
- Stock
- 16,612
- In Stock :
- 16,612
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 5V
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 40A, 10V
- Fall Time (Typ) :
- 35 ns
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Turn-Off Delay Time :
- 31 ns
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e3
- Power Dissipation :
- 110W
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 110W Tc
- Turn On Delay Time :
- 9 ns
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Drain Current-Max (Abs) (ID) :
- 70A
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.0055Ohm
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Rise Time :
- 205ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Current Rating :
- 80A
- JEDEC-95 Code :
- TO-251AA
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Base Part Number :
- STD10
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Continuous Drain Current (ID) :
- 80A
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 30V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2060pF @ 25V
- Series :
- STripFET™
- Datasheets
- STD100N03LT4
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N-Channel Tape & Reel (TR) 5.5m Ω @ 40A, 10V ±20V 2060pF @ 25V 27nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD100N03LT4 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2060pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is no drain current on this device since the maximum continuous current it can conduct is 70A.As a result of its turn-off delay time, which is 31 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
STD100N03LT4 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 31 ns
STD100N03LT4 Applications
There are a lot of STMicroelectronics
STD100N03LT4 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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