STD100NH03LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

700 mJ

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Pins :

3

Fall Time (Typ) :

23 ns

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Power Dissipation-Max :

100W Tc

Base Part Number :

STD10

Time@Peak Reflow Temperature-Max (s) :

30

JEDEC-95 Code :

TO-252AA

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Power Dissipation :

100W

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 15V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Rise Time :

95ns

Continuous Drain Current (ID) :

60A

Pulsed Drain Current-Max (IDM) :

240A

Terminal Finish :

Matte Tin (Sn)

Pin Count :

3

Element Configuration :

Single

Turn-Off Delay Time :

48 ns

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Current Rating :

60A

Voltage - Rated DC :

30V

Number of Terminations :

2

Number of Elements :

1

Transistor Application :

SWITCHING

Mount :

Surface Mount

Turn On Delay Time :

16 ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Series :

STripFET™ III

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 30A, 10V