STD100N10LF7AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

9m Ω @ 40A, 10V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

80A

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

320A

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 25V

Power Dissipation-Max :

125W Tc

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

100V

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

100V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Application :

SWITCHING

Base Part Number :

STD10

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.011Ohm

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

200 mJ

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Series :

Automotive, AEC-Q101, STripFET™ F7

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)