STD100N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

REACH SVHC :

No SVHC

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

46 ns

Avalanche Energy Rating (Eas) :

400 mJ

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

2.4mm

Packaging :

Cut Tape (CT)

Drive Voltage (Max Rds On,Min Rds On) :

10V

HTS Code :

8541.29.00.95

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Pins :

3

Series :

DeepGATE™, STripFET™ VII

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Element Configuration :

Single

Mounting Type :

Surface Mount

Base Part Number :

STD10

Resistance :

8mOhm

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Continuous Drain Current (ID) :

80A

ECCN Code :

EAR99

Number of Terminations :

3

Width :

6.2mm

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Radiation Hardening :

No

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Input Capacitance (Ciss) (Max) @ Vds :

4369pF @ 50V

Turn On Delay Time :

27 ns

Power Dissipation-Max :

120W Tc

Length :

6.6mm

Lead Free :

Lead Free

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4.5V

Power Dissipation :

120W

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON