STD100N10F7

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

27 ns

Base Part Number :

STD10

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

100V

Case Connection :

Isolated

Number of Elements :

1

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±20V

Height :

2.4mm

HTS Code :

8541.29.00.95

Series :

DeepGATE™, STripFET™ VII

Resistance :

8mOhm

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Length :

6.6mm

Avalanche Energy Rating (Eas) :

400 mJ

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Width :

6.2mm

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)

REACH SVHC :

No SVHC

Power Dissipation :

120W

Turn-Off Delay Time :

46 ns

Input Capacitance (Ciss) (Max) @ Vds :

4369pF @ 50V

Threshold Voltage :

4.5V

Continuous Drain Current (ID) :

80A

Power Dissipation-Max :

120W Tc