STD100N3LF3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

500 mJ

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±20V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Terminal Finish :

Matte Tin (Sn)

Series :

STripFET™ II

ECCN Code :

EAR99

Turn On Delay Time :

9 ns

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Number of Elements :

1

Radiation Hardening :

No

Pin Count :

3

JESD-609 Code :

e3

FET Type :

N-Channel

Continuous Drain Current (ID) :

80A

Resistance :

4.5mOhm

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 5V

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 40A, 10V

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mount :

Surface Mount

Case Connection :

DRAIN

Fall Time (Typ) :

35 ns

Transistor Application :

SWITCHING

Power Dissipation :

110W

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

205ns

Power Dissipation-Max :

110W Tc

Terminal Form :

Gull wing

Lead Free :

Lead Free

Number of Terminations :

2

Turn-Off Delay Time :

31 ns

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2060pF @ 25V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Base Part Number :

STD10

Vgs(th) (Max) @ Id :

2.5V @ 250μA