STD1NK60T4

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Mfr.Part #
STD1NK60T4
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 1A DPAK
Stock
4,767
In Stock :
4,767

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Current Rating :
1A
Factory Lead Time :
12 Weeks
Turn On Delay Time :
6.5 ns
Width :
6.2mm
Power Dissipation-Max :
30W Tc
Radiation Hardening :
No
Number of Terminations :
2
JEDEC-95 Code :
TO-252AA
Base Part Number :
STD1NK
Transistor Application :
SWITCHING
Power Dissipation :
30W
Mounting Type :
Surface Mount
Pulsed Drain Current-Max (IDM) :
4A
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
19 ns
Peak Reflow Temperature (Cel) :
260
Drain to Source Breakdown Voltage :
600V
Current - Continuous Drain (Id) @ 25°C :
1A Tc
Mount :
Surface Mount
Terminal Finish :
Matte Tin (Sn) - annealed
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Threshold Voltage :
3V
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
25 mJ
Height :
2.63mm
JESD-609 Code :
e3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
REACH SVHC :
No SVHC
Pin Count :
3
Continuous Drain Current (ID) :
1A
Input Capacitance (Ciss) (Max) @ Vds :
156pF @ 25V
Gate to Source Voltage (Vgs) :
30V
Series :
SuperMESH™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
25 ns
Length :
6.6mm
Terminal Form :
Gull wing
Max Junction Temperature (Tj) :
150°C
JESD-30 Code :
R-PSSO-G2
Manufacturer Package Identifier :
TO-252-P032P
Voltage - Rated DC :
600V
Rise Time :
5ns
Drain Current-Max (Abs) (ID) :
1A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Resistance :
8.5Ohm
Number of Elements :
1
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
3.7V @ 250μA
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
8.5 Ω @ 500mA, 10V
Packaging :
Tape and Reel (TR)
Number of Channels :
1
Number of Pins :
3
Element Configuration :
Single
FET Type :
N-Channel
Datasheets
STD1NK60T4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD1NK60T4 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Base Part Number:STD1NK, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Number of Pins:3, STD1NK60T4 pinout, STD1NK60T4 datasheet PDF, STD1NK60T4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD1NK60T4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD1NK60T4


N-Channel Tape & Reel (TR) 8.5 Ω @ 500mA, 10V ±30V 156pF @ 25V 10nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD1NK60T4 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 25 mJ.A device's maximal input capacitance is 156pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 4A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

STD1NK60T4 Features


the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 4A.
a threshold voltage of 3V


STD1NK60T4 Applications


There are a lot of STMicroelectronics
STD1NK60T4 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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