STD1NK60T4
- Mfr.Part #
- STD1NK60T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 1A DPAK
- Stock
- 4,767
- In Stock :
- 4,767
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Current Rating :
- 1A
- Factory Lead Time :
- 12 Weeks
- Turn On Delay Time :
- 6.5 ns
- Width :
- 6.2mm
- Power Dissipation-Max :
- 30W Tc
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- JEDEC-95 Code :
- TO-252AA
- Base Part Number :
- STD1NK
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 30W
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 4A
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 19 ns
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Breakdown Voltage :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 1A Tc
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Threshold Voltage :
- 3V
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 25 mJ
- Height :
- 2.63mm
- JESD-609 Code :
- e3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 1A
- Input Capacitance (Ciss) (Max) @ Vds :
- 156pF @ 25V
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- SuperMESH™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 25 ns
- Length :
- 6.6mm
- Terminal Form :
- Gull wing
- Max Junction Temperature (Tj) :
- 150°C
- JESD-30 Code :
- R-PSSO-G2
- Manufacturer Package Identifier :
- TO-252-P032P
- Voltage - Rated DC :
- 600V
- Rise Time :
- 5ns
- Drain Current-Max (Abs) (ID) :
- 1A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Resistance :
- 8.5Ohm
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 8.5 Ω @ 500mA, 10V
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Number of Pins :
- 3
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Datasheets
- STD1NK60T4
%3b%3b2.jpg)
N-Channel Tape & Reel (TR) 8.5 Ω @ 500mA, 10V ±30V 156pF @ 25V 10nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD1NK60T4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 25 mJ.A device's maximal input capacitance is 156pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 1A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 19 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 4A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STD1NK60T4 Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 1A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 4A.
a threshold voltage of 3V
STD1NK60T4 Applications
There are a lot of STMicroelectronics
STD1NK60T4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
















