STD1HNC60T4

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Mfr.Part #
STD1HNC60T4
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 600V 2A DPAK
Stock
35,588
In Stock :
35,588

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Power Dissipation-Max :
50W Tc
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
228pF @ 25V
Rds On (Max) @ Id, Vgs :
5 Ω @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs :
15.5nC @ 10V
Series :
PowerMESH™ II
Rise Time :
8.5ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
9 ns
Gate to Source Voltage (Vgs) :
30V
Current Rating :
2A
Continuous Drain Current (ID) :
2A
Vgs (Max) :
±30V
Operating Temperature :
150°C TJ
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id :
4V @ 250µA
FET Type :
N-Channel
Fall Time (Typ) :
9 ns
RoHS Status :
Non-RoHS Compliant
Number of Pins :
3
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Surface Mount
Voltage - Rated DC :
600V
Base Part Number :
STD1HN
Packaging :
Tape and Reel (TR)
Datasheets
STD1HNC60T4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STD1HNC60T4 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Mounting Type:Surface Mount, Base Part Number:STD1HN, STD1HNC60T4 pinout, STD1HNC60T4 datasheet PDF, STD1HNC60T4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD1HNC60T4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STD1HNC60T4


N-Channel Tape & Reel (TR) 5 Ω @ 1A, 10V ±30V 228pF @ 25V 15.5nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD1HNC60T4 Overview


A device's maximum input capacitance is 228pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.

STD1HNC60T4 Features


a continuous drain current (ID) of 2A


STD1HNC60T4 Applications


There are a lot of STMicroelectronics
STD1HNC60T4 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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