STD19NF20

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

200V

Power Dissipation-Max :

90W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

60A

Series :

MESH OVERLAY™

DS Breakdown Voltage-Min :

200V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

160m Ω @ 7.5A, 10V

Avalanche Energy Rating (Eas) :

110 mJ

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Number of Elements :

1

FET Type :

N-Channel

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.16Ohm

Base Part Number :

STD19

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

15A

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant