STD19N3LLH6AG
- Mfr.Part #
- STD19N3LLH6AG
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10A DPAK
- Stock
- 9,493
- In Stock :
- 9,493
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 30V
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 3.7nC @ 4.5V
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.05Ohm
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 5A, 10V
- Transistor Application :
- SWITCHING
- Series :
- Automotive, AEC-Q101, STripFET™
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 30V
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 10A
- Power Dissipation-Max :
- 30W Tc
- Avalanche Energy Rating (Eas) :
- 130 mJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Pulsed Drain Current-Max (IDM) :
- 40A
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- STD19
- Input Capacitance (Ciss) (Max) @ Vds :
- 321pF @ 25V
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- STD19N3LLH6AG
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N-Channel Tape & Reel (TR) 33m Ω @ 5A, 10V ±20V 321pF @ 25V 3.7nC @ 4.5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
STD19N3LLH6AG Description
STD19N3LLH6AG is a 30v Automotive-grade N-channel STripFET? H6 Power MOSFET. The STMicroelectronics STD19N3LLH6AG is developed using the STripFET? H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor STD19N3LLH6AG is in the TO-252-3 package with 30W power dissipation.
STD19N3LLH6AG Features
-
Designed for automotive applications and AEC-Q101 qualified
-
Very low on-resistance
-
Very low gate charge
-
High avalanche ruggedness
-
Low gate drive power loss
-
Logic level
STD19N3LLH6AG Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
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