STD18N55M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Rds On (Max) @ Id, Vgs :

192m Ω @ 8A, 10V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

4V

Lead Free :

Lead Free

Rise Time :

9.5ns

Packaging :

Tape and Reel (TR)

Series :

MDmesh™ V

Power Dissipation-Max :

110W Tc

Continuous Drain Current (ID) :

13A

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Length :

6.6mm

Input Capacitance (Ciss) (Max) @ Vds :

1260pF @ 100V

Gate to Source Voltage (Vgs) :

25V

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - annealed

Drain Current-Max (Abs) (ID) :

9A

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Transistor Element Material :

SILICON

Base Part Number :

STD18

Fall Time (Typ) :

13 ns

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

56A

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.2mm

Power Dissipation :

90W

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

FET Type :

N-Channel

Number of Terminations :

2

Vgs (Max) :

±25V

Resistance :

180mOhm

JESD-609 Code :

e3

Height :

2.4mm

Turn-Off Delay Time :

29 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

550V

Element Configuration :

Single

Factory Lead Time :

17 Weeks

Number of Pins :

3

Radiation Hardening :

No

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63