STD180N4F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

7735pF @ 25V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 40A, 10V

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

40V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Base Part Number :

STD18

Number of Elements :

1

Series :

STripFET™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

40V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

80A

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

130W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Lifecycle Status :

NRND (Last Updated: 7 months ago)

Case Connection :

DRAIN

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

320A

Surface Mount :

yes

Number of Terminations :

2

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0028Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V