STD16N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Number of Elements :

1

Gate to Source Voltage (Vgs) :

25V

Fall Time (Typ) :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Case Connection :

DRAIN

Additional Feature :

ULTRA-LOW RESISTANCE

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

12A

Number of Pins :

3

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Transistor Application :

SWITCHING

Turn-Off Delay Time :

30 ns

Threshold Voltage :

4V

Drain to Source Breakdown Voltage :

650V

Terminal Form :

Gull wing

Base Part Number :

STD16

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Pin Count :

3

Operating Temperature :

150°C TJ

Factory Lead Time :

17 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 100V

Width :

6.2mm

Mount :

Surface Mount

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Rise Time :

9ns

Turn On Delay Time :

25 ns

Rds On (Max) @ Id, Vgs :

299m Ω @ 6A, 10V

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

90W

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Avalanche Energy Rating (Eas) :

200 mJ

Power Dissipation-Max :

90W Tc

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Number of Terminations :

2

Vgs(th) (Max) @ Id :

5V @ 250μA

Resistance :

299mOhm

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

48A

FET Type :

N-Channel

Height :

2.4mm

Series :

MDmesh™ V

Length :

6.6mm

Drive Voltage (Max Rds On,Min Rds On) :

10V