STD16N50M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

500V

Drain to Source Breakdown Voltage :

550V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

280m Ω @ 6.5A, 10V

Series :

MDmesh™

Mounting Type :

Surface Mount

Base Part Number :

STD16

Continuous Drain Current (ID) :

13A

Power Dissipation-Max :

110W Tc

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

Mount :

Surface Mount

Turn On Delay Time :

9.6 ns

Gate Charge (Qg) (Max) @ Vgs :

19.5nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Weight :

3.949996g

Rise Time :

7.6ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

25V

Fall Time (Typ) :

10 ns

FET Type :

N-Channel

Turn-Off Delay Time :

32 ns

Element Configuration :

Single

Factory Lead Time :

16 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA