STD155N3H6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

3m Ω @ 40A, 10V

Height :

2.4mm

Turn On Delay Time :

20 ns

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Turn-Off Delay Time :

50 ns

Terminal Form :

Gull wing

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Width :

6.2mm

Threshold Voltage :

2V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rise Time :

90ns

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

80A

Resistance :

3mOhm

Fall Time (Typ) :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

3650pF @ 25V

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Mount :

Surface Mount

Series :

DeepGATE™, STripFET™ VI

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Base Part Number :

STD15

Power Dissipation-Max :

110W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

6.6mm

Additional Feature :

ULTRA-LOW RESISTANCE

Number of Elements :

1

Transistor Element Material :

SILICON

Power Dissipation :

110W

Avalanche Energy Rating (Eas) :

525 mJ