STD150N3LLH6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Power Dissipation-Max :

110W Tc

Terminal Finish :

Matte Tin (Sn) - annealed

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

ECCN Code :

EAR99

Nominal Vgs :

2.5 V

Pin Count :

3

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 40A, 10V

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

18ns

JESD-609 Code :

e3

Number of Terminations :

2

Turn-Off Delay Time :

75 ns

Continuous Drain Current (ID) :

80A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Height :

2.4mm

Number of Elements :

1

Width :

6.2mm

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Length :

6.6mm

Turn On Delay Time :

17 ns

Fall Time (Typ) :

46 ns

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Mounting Type :

Surface Mount

Power Dissipation :

110W

Terminal Form :

Gull wing

Number of Pins :

3

Lead Free :

Lead Free

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Base Part Number :

STD15

Resistance :

2.8MOhm

Avalanche Energy Rating (Eas) :

525 mJ

Case Connection :

DRAIN

Series :

DeepGATE™, STripFET™ VI

Operating Temperature :

175°C TJ

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Mount :

Surface Mount