STD14NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

172 mJ

FET Type :

N-Channel

Power Dissipation-Max :

90W

Drain to Source Voltage (Vdss) :

500V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Terminal Position :

Single

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Series :

Automotive, AEC-Q101, MDmesh™ II

Input Capacitance (Ciss) (Max) @ Vds :

816pF @ 50V

Surface Mount :

yes

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.32Ohm

Base Part Number :

STD14

Case Connection :

DRAIN

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

48A

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

500V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Vgs (Max) :

±25V

Number of Elements :

1

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

320m Ω @ 6A, 10V

Drain Current-Max (Abs) (ID) :

12A